PART |
Description |
Maker |
BT152F-600 BT152F |
600V Vdrm 20A Sensitive Gate Silicon Controlled Rectifier, 1.7@40AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage Silicon Controlled Rectifiers
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SEMIWELL[SemiWell Semiconductor]
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Z86C95-20AEC |
Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:5mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes 8位微控制
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Microchip Technology, Inc.
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STK11C48-5P45 STK11C48-5P45I STK11C48-5P30I STK11C |
Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:25mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:30mA Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Package/Case:D-PAK; Current, It av:6A; Gate Trigger Current Max, Igt:35mA Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:6A; Gate Trigger Current Max, Igt:10mA NVRAM (EEPROM Based) Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A; Holding Current:50mA Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Package/Case:V-PAK; Current, It av:6A; Gate Trigger Current Max, Igt:35mA Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:6A; Gate Trigger Current Max, Igt:35mA NVRAM中(EEPROM的基础 Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA NVRAM中(EEPROM的基础
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Electronic Theatre Controls, Inc.
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IRGBC40U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=20A)
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International Rectifier
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MAC997A6RLRP MAC997A8 MAC997A8RL1 MAC997A8RLRP MAC |
Sensitive Gate Triacs Silicon Bidirectional Thyristors SENSITIVE GATE TRACS 617SS Series Unipolar Hall-Effect Digital Position Sensor; dual output; 4-pin DIP IC 600 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92
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ONSEMI[ON Semiconductor]
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T2322-D T2322B |
Sensitive gate Triac Silicon Bidirectional Thyristors(2.5A,200V敏感门三端双向可控硅晶闸 TRIAC 2.5A 200V Sensitive Gate Triacs
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ON Semiconductor
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MAC4DLM-D MAC4DLM-1G |
Sensitive Gate Triacs; Package: DPAK-3 (SINGLE GAUGE); No of Pins: 4; Container: Rail; Qty per Container: 75 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC Sensitive Gate Triacs Silicon Bidirectional Thyristors
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ON Semiconductor
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MCR106-6G MCR106-8G MCR106-8 MCR106 MCR106-6 MCR10 |
Sensitive Gate Silicon Controlled Rectifier; Package: TO-225; No of Pins: 3; Container: Bulk; Qty per Container: 500 4 A, 600 V, SCR, TO-225AA SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
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ONSEMI[ON Semiconductor]
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MCR106-6 MCR106-8 MCR106-D |
Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors Sensitive Gate Silicon Controlled Rectifiers
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ON Semiconductor
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BD535K BD536J BD534K BD538K BD538J BD534 BD537 |
50.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE. 50.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE. ; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:20mA ; Package/Case:3-TO-218X; Current, It av:25A; Gate Trigger Current Max, Igt:80mA Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A ; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA; Holding Current:15mA RoHS Compliant: Yes
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Continental Device India Limited
|
STGW20NB60HD 6204 |
N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT N沟道20A 600V 247 PowerMESH IGBT N-CHANNEL 20A - 600V TO-247 PowerMESH TM IGBT From old datasheet system N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT
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STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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STP25NM60N07 STB25NM60N STB25NM60N-1 STF25NM60N ST |
N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET N-channel 600V - 0.140楼? - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh垄芒 Power MOSFET N-channel 600V - 0.140ヘ - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
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http:// STMicroelectronics
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